Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaNGaN HEMTs
Joint Authors
Yu, Chen-hui
Luo, Qing-zhou
Luo, Xiang-dong
Liu, Pei-sheng
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-11-18
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Medicine
Information Technology and Computer Science
Abstract EN
The effect of donor-like surface traps on two-dimensional electron gas (2DEG) and drain current collapse of AlGaN/GaN high electron mobility transistors (HEMTs) has been investigated in detail.
The depletion of 2DEG by the donor-like surface states is shown.
The drain current collapse is found to be more sensitive to the addition of positive surface charges.
Surface trap states with higher energy levels result in weaker current collapse and faster collapse process.
By adopting an optimized backside doping scheme, the electron density of 2DEG has been improved greatly and the current collapse has been greatly eliminated.
These results give reference to the improvement in device performance of AlGaN/GaN HEMTs.
American Psychological Association (APA)
Yu, Chen-hui& Luo, Qing-zhou& Luo, Xiang-dong& Liu, Pei-sheng. 2013. Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaNGaN HEMTs. The Scientific World Journal،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1013163
Modern Language Association (MLA)
Yu, Chen-hui…[et al.]. Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaNGaN HEMTs. The Scientific World Journal No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-1013163
American Medical Association (AMA)
Yu, Chen-hui& Luo, Qing-zhou& Luo, Xiang-dong& Liu, Pei-sheng. Donor-Like Surface Traps on Two-Dimensional Electron Gas and Current Collapse of AlGaNGaN HEMTs. The Scientific World Journal. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1013163
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1013163