Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film
Joint Authors
Source
Advances in Materials Science and Engineering
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-01-02
Country of Publication
Egypt
No. of Pages
7
Abstract EN
The electrical conduction and bipolar switching properties of resistive random access memory (RRAM) cells with transparent calcium bismuth titanate (CaBi4Ti4O15—CBTi144) thin films were investigated.
Experimentally, the (119)-oriented CBTi144 thin films were deposited onto the ITO/glass substrates by RF magnetron sputtering followed by rapid thermal annealing (RTA) at a temperature range of 450–550°C.
The surface morphologies and crystal structures of the CBTi144 thin films were examined by using field-emission scanning electron microscopy and X-ray diffraction measurements.
The on/off ratio and switching behaviors of the transparent Al/CBTi144/ITO/glass RRAM devices were further discussed in this work.
American Psychological Association (APA)
Lin, Jian-Yang& Wu, Chia-Lin. 2014. Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film. Advances in Materials Science and Engineering،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1015677
Modern Language Association (MLA)
Lin, Jian-Yang& Wu, Chia-Lin. Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film. Advances in Materials Science and Engineering No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-1015677
American Medical Association (AMA)
Lin, Jian-Yang& Wu, Chia-Lin. Bipolar Switching Characteristics of RRAM Cells with CaBi4Ti4O15 Film. Advances in Materials Science and Engineering. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1015677
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1015677
