On the Origin of Light Emission in Silicon Rich Oxide Obtained by Low-Pressure Chemical Vapor Deposition

Abstract EN

Silicon Rich Oxide (SRO) has been considered as a material to overcome the drawbacks of silicon to achieve optical functions.

Various techniques can be used to produce it, including Low-Pressure Chemical Vapor Deposition (LPCVD).

In this paper, a brief description of the studies carried out and discussions of the results obtained on electro-, cathode-, and photoluminescence properties of SRO prepared by LPCVD and annealed at 1,100°C are presented.

The experimental results lead us to accept that SRO emission properties are due to oxidation state nanoagglomerates rather than to nanocrystals.

The emission mechanism is similar to Donor-Acceptor decay in semiconductors, and a wide emission spectrum, from 450 to 850 nm, has been observed.

The results show that emission is a function of both silicon excess in the film and excitation energy.

As a result different color emissions can be obtained by selecting the suitable excitation energy.