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Doping Silicon Nanocrystals with Boron and Phosphorus
Author
Source
Issue
Vol. 2012, Issue 2012 (31 Dec. 2012), pp.1-9, 9 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2012-10-09
Country of Publication
Egypt
No. of Pages
9
Main Subjects
Abstract EN
The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping.
Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for B- and P-doping-induced changes in the optical properties of Si NCs.
This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs.
I remarks on the implications of newly gained insights on B- and P-doped Si NCs.
Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.
American Psychological Association (APA)
Pi, Xiaodong. 2012. Doping Silicon Nanocrystals with Boron and Phosphorus. Journal of Nanomaterials،Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-1029316
Modern Language Association (MLA)
Pi, Xiaodong. Doping Silicon Nanocrystals with Boron and Phosphorus. Journal of Nanomaterials No. 2012 (2012), pp.1-9.
https://search.emarefa.net/detail/BIM-1029316
American Medical Association (AMA)
Pi, Xiaodong. Doping Silicon Nanocrystals with Boron and Phosphorus. Journal of Nanomaterials. 2012. Vol. 2012, no. 2012, pp.1-9.
https://search.emarefa.net/detail/BIM-1029316
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1029316