Doping Silicon Nanocrystals with Boron and Phosphorus

Abstract EN

The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping.

Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for B- and P-doping-induced changes in the optical properties of Si NCs.

This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs.

I remarks on the implications of newly gained insights on B- and P-doped Si NCs.

Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.