Structural Studies and Optical and Electrical Properties of Novel Gd3+-Doped Sb2Se3 Nanorods

Abstract EN

Gd3+-doped Sb2Se3 nanorods were synthesized by coreduction method at 180°C and pH=12 for 48 h.

Powder XRD patterns indicate that the GdxSb2−xSe3 crystals (x=0.00–0.04) are isostructural with Sb2Se3.

The cell parameters a and b increase for Gd3+ upon increasing the dopant content (x), while c decreases.

SEM images show that doping of Gd3+ ions in the lattice of Sb2Se3 results in nanorods.

High-resolution transmission electron microscopic (HRTEM) studies reveal that the Gd0.04Sb1.96Se3 is oriented in the [10-1] growth direction.

UV-Vis absorption reveals mainly electronic transitions of the Gd3+ ions in doped nanomaterials.

Emission spectra of doped materials show sharp emission band originating from f-f transition 6P7/2→8S7/2 of the Gd3+ ions.

The electrical conductance of Gd-doped Sb2Se3 is higher than undoped Sb2Se3 and increases with temperature.