Materials for Future Quantum Dot-Based Memories
Joint Authors
Awedh, M.
Nowozin, Tobias
Ajour, Mohammed N.
Bimberg, Dieter
Daqrouq, Khaled
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-06-23
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
The present paper investigates the current status of the storage times in self-organized QDs, surveying a variety of heterostructures advantageous for strong electron and/or hole confinement.
Experimental data for the electronic properties, such as localization energies and capture cross-sections, are listed.
Based on the theory of thermal emission of carriers from QDs, we extrapolate the values for materials that would increase the storage time at room temperature to more than millions of years.
For electron storage, GaSb/AlSb, GaN/AlN, and InAs/AlSb are proposed.
For hole storage, GaSb/Al0.9Ga0.1As, GaSb/GaP, and GaSb/AlP are promising candidates.
American Psychological Association (APA)
Nowozin, Tobias& Bimberg, Dieter& Daqrouq, Khaled& Ajour, Mohammed N.& Awedh, M.. 2013. Materials for Future Quantum Dot-Based Memories. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1031319
Modern Language Association (MLA)
Nowozin, Tobias…[et al.]. Materials for Future Quantum Dot-Based Memories. Journal of Nanomaterials No. 2013 (2013), pp.1-6.
https://search.emarefa.net/detail/BIM-1031319
American Medical Association (AMA)
Nowozin, Tobias& Bimberg, Dieter& Daqrouq, Khaled& Ajour, Mohammed N.& Awedh, M.. Materials for Future Quantum Dot-Based Memories. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-6.
https://search.emarefa.net/detail/BIM-1031319
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1031319
