Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD
Joint Authors
Yang, Yong
Li, Dan
Liu, G. L.
Wu, J. H.
Huang, Z. R.
Source
Issue
Vol. 2013, Issue 2013 (31 Dec. 2013), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2013-02-12
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The nanoscale Si films with the thickness of 2 nm, 5 nm, 10 nm, and 20 nm were deposited by plasma ion assisted deposition (PIAD) on glass substrate, in order to investigate the initial stage and the nucleation and growth mechanism of the Si film.
The atomic force microscopy (AFM) was used to investigate the surface topography of the as-deposited Si film.
The initial nucleation and growth process of the film was described.
The continuous film had been already formed when the film thickness was 10 nm.
The growth of the deposited Si film accorded with the Volmer-Weber growth mode.
American Psychological Association (APA)
Li, Dan& Liu, G. L.& Yang, Yong& Wu, J. H.& Huang, Z. R.. 2013. Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD. Journal of Nanomaterials،Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-1031361
Modern Language Association (MLA)
Li, Dan…[et al.]. Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD. Journal of Nanomaterials No. 2013 (2013), pp.1-7.
https://search.emarefa.net/detail/BIM-1031361
American Medical Association (AMA)
Li, Dan& Liu, G. L.& Yang, Yong& Wu, J. H.& Huang, Z. R.. Nucleation and Growth Mechanism of Si Amorphous Film Deposited by PIAD. Journal of Nanomaterials. 2013. Vol. 2013, no. 2013, pp.1-7.
https://search.emarefa.net/detail/BIM-1031361
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1031361