Characterization of a-Si:Hc-Si Heterojunctions by Time Resolved Microwave Conductivity Technique
Joint Authors
Limmanee, Amornrat
Nassar, Joaquim
Sobkowicz, Igor P.
Courtois, Guillaume
Moreau, Francois
Cabarrocas, Pere Roca I
Sriprapha, Kobsak
Sritharathikhun, Jaran
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-03-03
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
In heterojunction solar cells, a-Si:H/c-Si heterointerface is of significant importance, since the heterointerface characteristics directly affect junction properties and thus solar cell efficiency.
In this study, we have performed time resolved microwave conductivity (TRMC) measurements on n-type c-Si wafers passivated on both sides with intrinsic and doped a-Si:H layers in order to investigate electrical property and passivation quality of the a-Si:H/c-Si heterojunctions.
It was found that the TRMC decay time and decay curve shape varied with the laser wavelength and power intensity and also depended on sample structures.
By using 1064 nm laser pulse with high excitation, differences in the decay curve shape between samples with and without p-n junction were observed.
The samples containing p-n junction(s) had unique slow decay mode, after the initial fast decay, which we ascribed to the release of carriers from the low-mobility amorphous layer into the high-mobility crystalline wafer as the built-in field of the junction was restored.
Experimental results suggest that the TRMC is useful nondestructive technique which is suitable for primary check of the a-Si:H/c-Si heterojunctions during the solar cell fabrication process.
American Psychological Association (APA)
Limmanee, Amornrat& Nassar, Joaquim& Sobkowicz, Igor P.& Sritharathikhun, Jaran& Sriprapha, Kobsak& Courtois, Guillaume…[et al.]. 2014. Characterization of a-Si:Hc-Si Heterojunctions by Time Resolved Microwave Conductivity Technique. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-4.
https://search.emarefa.net/detail/BIM-1036856
Modern Language Association (MLA)
Limmanee, Amornrat…[et al.]. Characterization of a-Si:Hc-Si Heterojunctions by Time Resolved Microwave Conductivity Technique. International Journal of Photoenergy No. 2014 (2014), pp.1-4.
https://search.emarefa.net/detail/BIM-1036856
American Medical Association (AMA)
Limmanee, Amornrat& Nassar, Joaquim& Sobkowicz, Igor P.& Sritharathikhun, Jaran& Sriprapha, Kobsak& Courtois, Guillaume…[et al.]. Characterization of a-Si:Hc-Si Heterojunctions by Time Resolved Microwave Conductivity Technique. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-4.
https://search.emarefa.net/detail/BIM-1036856
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1036856