Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes
Joint Authors
Horng, Ray-Hua
Hsueh, Hsu-Hung
Ou, Sin-Liang
Cheng, Chiao-Yang
Wuu, Dong-Sing
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-06-19
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
InGaN light-emitting diodes (LEDs) were fabricated on cone-shaped patterned sapphire substrates (PSSs) by using low-pressure metalorganic chemical vapor deposition.
To enhance the crystal quality of the GaN epilayer and the optoelectronic performance of the LED device, the top-tip cone shapes of the PSSs were further modified using wet etching.
Through the wet etching treatment, some dry-etched induced damage on the substrate surface formed in the PSS fabrication process can be removed to achieve a high epilayer quality.
In comparison to the LEDs prepared on the conventional sapphire substrate (CSS) and cone-shaped PSS without wet etching, the LED grown on the cone-shaped PSS by performing wet etching for 3 min exhibited 55% and 10% improvements in the light output power (at 350 mA), respectively.
This implies that the modification of cone-shaped PSSs possesses high potential for LED applications.
American Psychological Association (APA)
Hsueh, Hsu-Hung& Ou, Sin-Liang& Cheng, Chiao-Yang& Wuu, Dong-Sing& Horng, Ray-Hua. 2014. Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1037356
Modern Language Association (MLA)
Hsueh, Hsu-Hung…[et al.]. Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes. International Journal of Photoenergy No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-1037356
American Medical Association (AMA)
Hsueh, Hsu-Hung& Ou, Sin-Liang& Cheng, Chiao-Yang& Wuu, Dong-Sing& Horng, Ray-Hua. Performance of InGaN Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates with Modified Top-Tip Cone Shapes. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1037356
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1037356