Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

Abstract EN

A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper.

The opportunity for successfully applying the combination of reflectance and reflectance anisotropy spectroscopy in situ methods for investigating III-V structure growth on a Ge substrate has been demonstrated.

Photovoltaic properties of the III-V/Ge narrow-band subcell of the triple-junction solar cells have been investigated.

It has been shown that there are excess currents in the Ge photovoltaic p-n junctions, and they have the tunneling or thermotunneling character.

The values of the diode parameters for these current flow mechanisms have been determined.

The potential barrier at the III-V/Ge interface was determined and the origin of this barrier formation during MOVPE heterogrowth was suggested.