Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition
Joint Authors
Chang, Teng-Hsiang
Chang, Chiao
Chu, Yen-Ho
Lee, Chien-Chieh
Chang, Jenq-Yang
Chen, I-Chen
Li, Tomi T.
Source
International Journal of Photoenergy
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-08-10
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
This paper describes a new method to grow thin germanium (Ge) epilayers (40 nm) on c-Si substrates at a low growth temperature of 180°C using electron cyclotron resonance chemical vapor deposition (ECR-CVD) process.
The full width at half maximum (FWHM) of the Ge (004) in X-ray diffraction pattern and the compressive stain in a Ge epilayer of 683 arcsec and 0.12% can be achieved.
Moreover, the Ge/Si interface is observed by transmission electron microscopy to demonstrate the epitaxial growth of Ge on Si and the surface roughness is 0.342 nm.
The thin-thickness and smooth surface of Ge epilayer grown on Si in this study is suitable to be a virtual substrate for developing the low cost and high efficiency III-V/Si tandem solar cells in our opinion.
Furthermore, the low temperature process can not only decrease costs but can also reduce the restriction of high temperature processes on device manufacturing.
American Psychological Association (APA)
Chang, Teng-Hsiang& Chang, Chiao& Chu, Yen-Ho& Lee, Chien-Chieh& Chang, Jenq-Yang& Chen, I-Chen…[et al.]. 2014. Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition. International Journal of Photoenergy،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1037407
Modern Language Association (MLA)
Chang, Teng-Hsiang…[et al.]. Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition. International Journal of Photoenergy No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1037407
American Medical Association (AMA)
Chang, Teng-Hsiang& Chang, Chiao& Chu, Yen-Ho& Lee, Chien-Chieh& Chang, Jenq-Yang& Chen, I-Chen…[et al.]. Low Temperature (180°C) Growth of Smooth Surface Germanium Epilayers on Silicon Substrates Using Electron Cyclotron Resonance Chemical Vapor Deposition. International Journal of Photoenergy. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1037407
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1037407