Synthesis of Cu-Poor Copper-Indium-Gallium-Diselenide Nanoparticles by Solvothermal Route for Solar Cell Applications

Abstract EN

Copper-indium-gallium-diselenide (CIGS) thin films were fabricated using precursor nanoparticle ink and sintering technology.

The precursor was a Cu-poor quaternary compound with constituent ratios of C u / ( I n + G a ) = 0.603 , G a / ( I n + G a ) = 0.674 , and S e / ( C u + I n + G a ) = 1.036 .

Cu-poor CIGS nanoparticles of chalcopyrite for solar cells were successfully synthesized using a relatively simple and convenient elemental solvothermal route.

After a fixed reaction time of 36 h at 180°C, CIGS nanocrystals with diameters in the range of 20–70 nm were observed.

The nanoparticle ink was fabricated by mixing CIGS nanoparticles, a solvent, and an organic polymer.

Analytical results reveal that the Cu-poor CIGS absorption layer prepared from a nanoparticle-ink polymer by sintering has a chalcopyrite structure and a favorable composition.

For this kind of sample, its mole ratio of Cu : In : Ga : Se is equal to 0.617 : 0.410 : 0.510 : 2.464 and related ratios of G a / ( I n + G a ) and C u / ( I n + G a ) are 0.554 and 0.671, respectively.

Under the condition of standard air mass 1.5 global illumination, the conversion efficiency of the solar cell fabricated by this kind of sample is 4.05%.