The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots

Joint Authors

Zhou, Shuai
Liu, Yumin
Lu, Pengfei
Han, Lihong
Yu, Zhongyuan

Source

Journal of Nanomaterials

Issue

Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2014-02-16

Country of Publication

Egypt

No. of Pages

5

Main Subjects

Chemistry
Civil Engineering

Abstract EN

Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment.

From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.

American Psychological Association (APA)

Zhou, Shuai& Liu, Yumin& Lu, Pengfei& Han, Lihong& Yu, Zhongyuan. 2014. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041202

Modern Language Association (MLA)

Zhou, Shuai…[et al.]. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-1041202

American Medical Association (AMA)

Zhou, Shuai& Liu, Yumin& Lu, Pengfei& Han, Lihong& Yu, Zhongyuan. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041202

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-1041202