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The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots
Joint Authors
Zhou, Shuai
Liu, Yumin
Lu, Pengfei
Han, Lihong
Yu, Zhongyuan
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-16
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
Taking elastic anisotropy into consideration, we use a dislocation position dependent model to calculate the preferential formation site of noninterfacial 60° mixed dislocation segment in ellipsoid shaped InAs/GaAs quantum dots (QDs) which is observed in the experiment.
From the result, it is clear that the positions near the right edge of the quantum dot are the energy favorable areas for the noninterfacial 60° mixed dislocations.
American Psychological Association (APA)
Zhou, Shuai& Liu, Yumin& Lu, Pengfei& Han, Lihong& Yu, Zhongyuan. 2014. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041202
Modern Language Association (MLA)
Zhou, Shuai…[et al.]. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials No. 2014 (2014), pp.1-5.
https://search.emarefa.net/detail/BIM-1041202
American Medical Association (AMA)
Zhou, Shuai& Liu, Yumin& Lu, Pengfei& Han, Lihong& Yu, Zhongyuan. The Formation Site of Noninterfacial Misfit Dislocations in InAsGaAs Quantum Dots. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-5.
https://search.emarefa.net/detail/BIM-1041202
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041202