Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon
Joint Authors
García-Salgado, G.
Luna-López, A.
Severiano, F.
Gracia-Jiménez, J. M.
Gómez-Pozos, Heberto
Castañeda, Luis
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-01-06
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Electroluminescent devices (ELD) based on junctions of indium doped zinc oxide (ZnO:In) and porous silicon layers (PSL) are presented in this work.
PSL with different thicknesses and photoluminescent emission, around 680 nm, were obtained by anodic etching.
PSL were coated with a ZnO:In film which was obtained by ultrasonic spray pyrolysis technique.
Once obtained, this structure was optically and electrically characterized.
When the devices were electrically polarized they showed stable electroluminescence (EL) which was presented as dots scattered over the surface.
These dots can be seen with the naked eye.
The observed EL goes from the 410 to 1100 nm, which is formed by different emission bands.
The EL emission in the visible region was around 400 to 750 nm, and the emission corresponding to the infrared part covers the 750 to 1150 nm.
The electrical characterization was carried out by current-voltage curves (I-V) which show a rectifying behavior of the devices.
Observed electroluminescent dots are associated with the electron-hole injection into quantized states in PS as well as the emission from the ZnO:In film.
American Psychological Association (APA)
Severiano, F.& García-Salgado, G.& Castañeda, Luis& Gracia-Jiménez, J. M.& Gómez-Pozos, Heberto& Luna-López, A.. 2014. Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1041514
Modern Language Association (MLA)
Severiano, F.…[et al.]. Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon. Journal of Nanomaterials No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-1041514
American Medical Association (AMA)
Severiano, F.& García-Salgado, G.& Castañeda, Luis& Gracia-Jiménez, J. M.& Gómez-Pozos, Heberto& Luna-López, A.. Electroluminescent Devices Based on Junctions of Indium Doped Zinc Oxide and Porous Silicon. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1041514
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041514