Resistance Fluctuations in GaAs Nanowire Grids

Abstract EN

We present a numerical study on resistance fluctuations in a series of nanowire-based grids.

Each grid is made of GaAs nanowires arranged in parallel with metallic contacts crossing all nanowires perpendicularly.

Electrical properties of GaAs nanowires known from previous experimental research are used as input parameters in the simulation procedure.

Due to the nonhomogeneous doping, the resistivity changes along nanowire.

Allowing two possible nanowire orientations (“upwards” or “downwards”), the resulting grid is partially disordered in vertical direction which causes resistance fluctuations.

The system is modeled using a two-dimensional random resistor network.

Transfer-matrix computation algorithm is used to calculate the total network resistance.

It is found that probability density function (PDF) of resistance fluctuations for a series of nanowire grids changes from Gaussian behavior towards the Bramwell-Holdsworth-Pinton distribution when both nanowire orientations are equally represented in the grid.