Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis
Joint Authors
Tan, Michael Loong Peng
Lim, Wei
Chin, Huei Chaeng
Lim, Cheng Siong
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-07-23
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
As the technology node size decreases, the number of static random-access memory (SRAM) cells on a single word line increases.
The coupling capacitance will increase with the increase of the load of word line, which reduces the performance of SRAM, more obvious in the SRAM signal delay and the SRAM power usage.
The main purpose of this study is to investigate the stability and evaluate the power consumption of a 14 nm gate length FinFET-based 6T SRAM cell functionality for direct current (DC) and transient circuit analysis, namely, in resistor-capacitor (RC) delay.
In particular, Berkeley Short-channel IGFET Model-Common Multigate (BSIM-CMG) model is utilized.
The simulation of the SRAM model is carried out in HSPICE based on 14 nm process technology.
A shorted-gate (SG) mode FinFET is modeled on a silicon on insulator (SOI) substrate.
It is tested in terms of functionality and stability.
Then, a functional SRAM is simulated with 5 GHz square wave at the input of word line (WL).
Ideal square wave and square wave with 100 RC, 5 RC, 1 RC, and 0.5 RC are asserted to the WL and the bit lines (BL&BLB) of SRAM.
Voltage at node q and q - is observed.
The simulation shows that 1 RC is the minimum square wave that will store correct value in node q and node q - .
Thus, this discovery from the research can be used as a modeling platform for circuit designers to explore and improve the SRAM tolerance against RC delay.
American Psychological Association (APA)
Lim, Wei& Chin, Huei Chaeng& Lim, Cheng Siong& Tan, Michael Loong Peng. 2014. Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis. Journal of Nanomaterials،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1041965
Modern Language Association (MLA)
Lim, Wei…[et al.]. Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis. Journal of Nanomaterials No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1041965
American Medical Association (AMA)
Lim, Wei& Chin, Huei Chaeng& Lim, Cheng Siong& Tan, Michael Loong Peng. Performance Evaluation of 14 nm FinFET-Based 6T SRAM Cell Functionality for DC and Transient Circuit Analysis. Journal of Nanomaterials. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1041965
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1041965