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Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals
Joint Authors
Oliver, Alicia
Reyes Esqueda, Jorge Alejandro
Ruvalcaba-Sil, J. L.
Jaimes, F. J.
Bornacelli, Jhovani
Rodríguez Fernández, Luis
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-01-06
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
Efficient silicon-based light emitters continue to be a challenge.
A great effort has been made in photonics to modify silicon in order to enhance its light emission properties.
In this aspect silicon nanocrystals (Si-NCs) have become the main building block of silicon photonic (modulators, waveguide, source, and detectors).
In this work, we present an approach based on implantation of Ag (or Au) ions and a proper thermal annealing in order to improve the photoluminescence (PL) emission of Si-NCs embedded in SiO2.
The Si-NCs are obtained by ion implantation at MeV energy and nucleated at high depth into the silica matrix (1-2 μm under surface).
Once Si-NCs are formed inside the SiO2 we implant metal ions at energies that do not damage the Si-NCs.
We have observed by, PL and time-resolved PL, that ion metal implantation and a subsequent thermal annealing in a hydrogen-containing atmosphere could significantly increase the emission properties of Si-NCs.
Elastic Recoil Detection measurements show that the samples with an enhanced luminescence emission present a higher hydrogen concentration.
This suggests that ion metal implantation enhances the hydrogen diffusion into silica matrix allowing a better passivation of surface defects on Si NCs.
American Psychological Association (APA)
Bornacelli, Jhovani& Reyes Esqueda, Jorge Alejandro& Rodríguez Fernández, Luis& Ruvalcaba-Sil, J. L.& Jaimes, F. J.& Oliver, Alicia. 2014. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals. Journal of Nanotechnology،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1042219
Modern Language Association (MLA)
Bornacelli, Jhovani…[et al.]. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals. Journal of Nanotechnology No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-1042219
American Medical Association (AMA)
Bornacelli, Jhovani& Reyes Esqueda, Jorge Alejandro& Rodríguez Fernández, Luis& Ruvalcaba-Sil, J. L.& Jaimes, F. J.& Oliver, Alicia. Enhancing Hydrogen Diffusion in Silica Matrix by Using Metal Ion Implantation to Improve the Emission Properties of Silicon Nanocrystals. Journal of Nanotechnology. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1042219
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1042219