Fabrication of p-Si ZnO thin films solar cell by CVD at different substrate temperatures

Abstract EN

-Zinc Oxide is a prominent candidate to be used a window layer in Si based solar cell.

In this study, Fabricated solar cell parameters with different substrate temperatures (400,450,500 ̊C) of Si/ZnO have been prepared by chemical vapor deposition method to find out the higher conversion.

Moreover, it is found that Isc, Voc and η are increased for the substrate temperature increase at 500 ̊C.

The best efficiency value calculated was 9.47% at substrate temperature 500 ̊C.

Experimentally the electrical properties measured also ρ, σ and Φb as Si substrate temperature increased until 500 ̊C, the electrical resistivity of Si/ZnO solar cell was (0.231 ohm.m) at 400 ̊C and it is increased as Si substrate temp.

increase, which leads to the decrease of conductivity.