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Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers
Author
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-07-22
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Medicine
Information Technology and Computer Science
Abstract EN
This paper introduces modeling and simulation of the noise properties of the blue-violet InGaN laser diodes.
The noise is described in terms of the spectral properties of the relative intensity noise (RIN).
We examine the validity of the present noise modeling by comparing the simulated results with the experimental measurements available in literature.
We also compare the obtained noise results with those of AlGaAs lasers.
Also, we examine the influence of gain suppression on the quantum RIN.
In addition, we examine the changes in the RIN level when describing the gain suppression by the case of inhomogeneous spectral broadening.
The results show that RIN of the InGaN laser is nearly 9 dB higher than that of the AlGaAs laser.
American Psychological Association (APA)
Ahmed, Moustafa. 2014. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers. The Scientific World Journal،Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1049753
Modern Language Association (MLA)
Ahmed, Moustafa. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers. The Scientific World Journal No. 2014 (2014), pp.1-6.
https://search.emarefa.net/detail/BIM-1049753
American Medical Association (AMA)
Ahmed, Moustafa. Theoretical Modeling of Intensity Noise in InGaN Semiconductor Lasers. The Scientific World Journal. 2014. Vol. 2014, no. 2014, pp.1-6.
https://search.emarefa.net/detail/BIM-1049753
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1049753