High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration
Joint Authors
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-23
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Medicine
Information Technology and Computer Science
Abstract EN
This paper presents a novel design of single-pole four-throw (SP4T) RF-MEMS switch employing both capacitive and ohmic switches.
It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2.
The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact.
The pull-in voltage for ohmic switches is calculated to be 7.19 V.
Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies.
The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.
American Psychological Association (APA)
Singh, Tejinder& Khaira, Navjot. 2014. High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration. The Scientific World Journal،Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1050309
Modern Language Association (MLA)
Singh, Tejinder& Khaira, Navjot. High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration. The Scientific World Journal No. 2014 (2014), pp.1-7.
https://search.emarefa.net/detail/BIM-1050309
American Medical Association (AMA)
Singh, Tejinder& Khaira, Navjot. High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration. The Scientific World Journal. 2014. Vol. 2014, no. 2014, pp.1-7.
https://search.emarefa.net/detail/BIM-1050309
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1050309