Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes
Joint Authors
Srivastava, Anurag
Khan, Mohammad Irfan
Tyagi, Neha
Swaroop Khare, Purnima
Source
Issue
Vol. 2014, Issue 2014 (31 Dec. 2014), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2014-02-24
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Medicine
Information Technology and Computer Science
Abstract EN
The present paper discusses the effect of manganese doping on the structural stability and electronic band gap of chiral (2, 1), armchair (3, 3), and zigzag ((6, 0) and (10, 0)) single walled GaN nanotube by using density functional theory based Atomistix Toolkit (ATK) Virtual NanoLab (VNL).
The structural stability has been analyzed in terms of minimum ground state total energy, binding, and formation energy.
As an effect of Mn doping (1–4 atoms), all the GaN nanotubes taken into consideration show semiconducting to metallic transition first and after certain level of Mn doping changes its trend.
American Psychological Association (APA)
Srivastava, Anurag& Khan, Mohammad Irfan& Tyagi, Neha& Swaroop Khare, Purnima. 2014. Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes. The Scientific World Journal،Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1051872
Modern Language Association (MLA)
Srivastava, Anurag…[et al.]. Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes. The Scientific World Journal No. 2014 (2014), pp.1-8.
https://search.emarefa.net/detail/BIM-1051872
American Medical Association (AMA)
Srivastava, Anurag& Khan, Mohammad Irfan& Tyagi, Neha& Swaroop Khare, Purnima. Doping Induced Structural Stability and Electronic Properties of GaN Nanotubes. The Scientific World Journal. 2014. Vol. 2014, no. 2014, pp.1-8.
https://search.emarefa.net/detail/BIM-1051872
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1051872
