(112) Surface of CuInSe2 Thin Films with Doped Cd Atoms
Joint Authors
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-01-27
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The doping behavior of Cd atoms in the CuInSe2 thin films and their influences on electronic structures are investigated.
The doped Cd atoms replace Cu atoms and prefer to stay at the (112) surface of the thin films.
They combine with Cu vacancies to form defect pairs due to low formation energy.
The Cd atom does not by itself modify significantly the electronic structure of the surface, but the defect pairs have important influences.
They result in a down shift of valence band maximum and form a hole barrier at the surface, which can prevent holes from reaching the surface and reduce the recombination of carriers.
American Psychological Association (APA)
Yin, Bo& Lou, Chaogang. 2015. (112) Surface of CuInSe2 Thin Films with Doped Cd Atoms. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1052236
Modern Language Association (MLA)
Yin, Bo& Lou, Chaogang. (112) Surface of CuInSe2 Thin Films with Doped Cd Atoms. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-7.
https://search.emarefa.net/detail/BIM-1052236
American Medical Association (AMA)
Yin, Bo& Lou, Chaogang. (112) Surface of CuInSe2 Thin Films with Doped Cd Atoms. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1052236
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052236