Structural and Electronic Properties of GaN (0001)α-Al2O3 (0001) Interface
Joint Authors
Pereira, M. B.
Diniz, E. M.
Guerini, S.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-05-20
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
Structural and electronic properties of the interface between α-Al2O3 (0001) and GaN (0001) surfaces are investigated through ab initio calculations within the density functional theory.
Two different structural models have been investigated interface N(Ga)-terminated.
The interface N-terminated GaN surface seems to exhibit the lowest formation energy.
The studied interface models are metallic, with the levels at energy spatially confined in the interface region.
Our calculations show strong hybridization between atoms in the interface region.
American Psychological Association (APA)
Pereira, M. B.& Diniz, E. M.& Guerini, S.. 2015. Structural and Electronic Properties of GaN (0001)α-Al2O3 (0001) Interface. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052263
Modern Language Association (MLA)
Pereira, M. B.…[et al.]. Structural and Electronic Properties of GaN (0001)α-Al2O3 (0001) Interface. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1052263
American Medical Association (AMA)
Pereira, M. B.& Diniz, E. M.& Guerini, S.. Structural and Electronic Properties of GaN (0001)α-Al2O3 (0001) Interface. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052263
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052263
