Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices
Joint Authors
Liu, Lifeng
Hou, Yi
Zhang, Weibing
Han, Dedong
Wang, Yi
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-04-23
Country of Publication
Egypt
No. of Pages
5
Main Subjects
Abstract EN
HfAlO2 based resistive random access memory (RRAM) devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO2 and Al2O3.
Effect of ozone treatment on the resistive switching uniformity of HfAlO2 based RRAM devices was investigated.
Compared to the as-fabricated devices, the resistive switching uniformity of HfAlO2 based RRAM devices with the ozone treatment is significantly improved.
The uniformity improvement of HfAlO2 based RRAM devices is related to changes in compositional and structural properties of the HfAlO2 resistive switching film with the ozone treatment.
American Psychological Association (APA)
Liu, Lifeng& Hou, Yi& Zhang, Weibing& Han, Dedong& Wang, Yi. 2015. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1052299
Modern Language Association (MLA)
Liu, Lifeng…[et al.]. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1052299
American Medical Association (AMA)
Liu, Lifeng& Hou, Yi& Zhang, Weibing& Han, Dedong& Wang, Yi. Ozone Treatment Improved the Resistive Switching Uniformity of HfAlO2 Based RRAM Devices. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1052299
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052299
