The Investigation of Field Plate Design in 500 V High Voltage NLDMOS
Joint Authors
Xu, Xiangming
Wang, Peng-Fei
Shi, Jing
Liu, Donghua
Jin, Feng
Duan, Wenting
Wang, Huihui
Yao, Yuan
Hu, Jun
Qian, Wensheng
Zhang, David Wei
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-04-23
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD) improved by field plate technology.
Effect of metal field plate (MFP) and polysilicon field plate (PFP) on breakdown voltage improvement of high voltage NLDMOS is studied.
The coeffect of MFP and PFP on drain side has also been investigated.
A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design.
Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2) are achieved.
American Psychological Association (APA)
Liu, Donghua& Xu, Xiangming& Jin, Feng& Duan, Wenting& Wang, Huihui& Shi, Jing…[et al.]. 2015. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052316
Modern Language Association (MLA)
Liu, Donghua…[et al.]. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1052316
American Medical Association (AMA)
Liu, Donghua& Xu, Xiangming& Jin, Feng& Duan, Wenting& Wang, Huihui& Shi, Jing…[et al.]. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052316
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052316
