Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs
Joint Authors
Li, Yu-Chen
Zhang, He-Ming
Liu, Shu-lin
Hu, Hui-Yong
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-09-03
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
A novel nanoscale fully depleted strained-SOI TFET (FD-SSOI TFET) is proposed and exhaustively simulated through Atlas Device Simulator.
It is found that FD-SSOI TFET has the potential of improved on-current and steep subthreshold swing.
Furthermore, the effect of strain and dimension on the threshold voltage of FD-SSOI TFET is thoroughly studied by developing a model based on its physical definition.
The validity of the model is tested for FD-SSOI TFET by comparison to 2D device simulations.
It is shown that the proposed model can predict the trends of threshold voltage very well.
This proposed model provides valuable reference to the FD-SSOI TFETs design, simulation, and fabrication.
American Psychological Association (APA)
Li, Yu-Chen& Zhang, He-Ming& Liu, Shu-lin& Hu, Hui-Yong. 2015. Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052321
Modern Language Association (MLA)
Li, Yu-Chen…[et al.]. Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1052321
American Medical Association (AMA)
Li, Yu-Chen& Zhang, He-Ming& Liu, Shu-lin& Hu, Hui-Yong. Strain and Dimension Effects on the Threshold Voltage of Nanoscale Fully Depleted Strained-SOI TFETs. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1052321
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052321