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The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature
Joint Authors
Xie, Xiaoming
Sun, Y. B.
Di, Z. F.
Hu, T.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-07-21
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
We have fabricated the heavily Ga-doped layer in Ge single crystal by the implantation and rapid thermal annealing method.
The samples show a crossover from the insulating to the superconducting behavior as the annealing temperature increases.
Transport measurements suggest that the superconductivity is from the heavily Ga-doped layer in Ge.
American Psychological Association (APA)
Sun, Y. B.& Di, Z. F.& Hu, T.& Xie, Xiaoming. 2015. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. Advances in Condensed Matter Physics،Vol. 2015, no. 2015, pp.1-4.
https://search.emarefa.net/detail/BIM-1052335
Modern Language Association (MLA)
Sun, Y. B.…[et al.]. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. Advances in Condensed Matter Physics No. 2015 (2015), pp.1-4.
https://search.emarefa.net/detail/BIM-1052335
American Medical Association (AMA)
Sun, Y. B.& Di, Z. F.& Hu, T.& Xie, Xiaoming. The Insulator to Superconductor Transition in Ga-Doped Semiconductor Ge Single Crystal Induced by the Annealing Temperature. Advances in Condensed Matter Physics. 2015. Vol. 2015, no. 2015, pp.1-4.
https://search.emarefa.net/detail/BIM-1052335
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1052335