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An Analytical Gate-All-Around MOSFET Model for Circuit Simulation
Joint Authors
Chiang, Meng-Hsueh
Lin, Kuan-Chou
Ding, Wei-Wen
Source
Advances in Materials Science and Engineering
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-5, 5 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-08-12
Country of Publication
Egypt
No. of Pages
5
Abstract EN
A generic charge-based compact model for undoped (lightly doped) quadruple-gate (QG) and cylindrical-gate MOSFETs using Verilog-A is developed.
This model is based on the exact solution of Poisson’s equation with scale length.
The fundamental DC and charging currents of QG MOSFETs are physically and analytically calculated.
In addition, as the Verilog-A modeling is portable for different circuit simulators, the modeling scheme provides a useful tool for circuit designers.
American Psychological Association (APA)
Lin, Kuan-Chou& Ding, Wei-Wen& Chiang, Meng-Hsueh. 2015. An Analytical Gate-All-Around MOSFET Model for Circuit Simulation. Advances in Materials Science and Engineering،Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1053214
Modern Language Association (MLA)
Lin, Kuan-Chou…[et al.]. An Analytical Gate-All-Around MOSFET Model for Circuit Simulation. Advances in Materials Science and Engineering No. 2015 (2015), pp.1-5.
https://search.emarefa.net/detail/BIM-1053214
American Medical Association (AMA)
Lin, Kuan-Chou& Ding, Wei-Wen& Chiang, Meng-Hsueh. An Analytical Gate-All-Around MOSFET Model for Circuit Simulation. Advances in Materials Science and Engineering. 2015. Vol. 2015, no. 2015, pp.1-5.
https://search.emarefa.net/detail/BIM-1053214
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1053214