Deposition-Parameter-Determined Resistive Switching Characteristics in TiO xPb(Zr0.52Ti0.48)‎O3 Bilayers

Abstract EN

Pb(Zr0.52Ti0.48)O3 (PZT) ferroelectric thin films were deposited epitaxially, by pulsed laser deposition, on (001) SrTiO3 substrates buffered with La0.7Sr0.3MnO3 (LSMO) electrodes.

Amorphous T i O x thin films were deposited on top of PZT at various temperatures and oxygen chamber pressures.

Bipolar resistive switching characteristics of Pt/ T i O x /PZT/LSMO heterostructures are found to vary with T i O x deposition parameters, from an interface controlled ferroelectric diode behavior to a bulk-controlled conductive filament behavior.

The observations are discussed in terms of the concentration and migration of oxygen vacancies in the T i O x layer.