Gallium Nitride Electrical Characteristics Extraction and Uniformity Sorting

Abstract EN

This study examined the output electrical characteristics—current-voltage (I-V) output, threshold voltage, and parasitic capacitance—of novel gallium nitride (GaN) power transistors.

Experimental measurements revealed that both enhanced- and depletion-mode GaN field-effect transistors (FETs) containing different components of identical specifications yielded varied turn-off impedance; hence, the FET quality was inconsistent.

Establishing standardized electrical measurements can provide necessary information for designers, and measuring transistor electrical characteristics establishes its equivalent-circuit model for circuit simulations.

Moreover, high power output requires multiple parallel power transistors, and sorting the difference between similar electrical characteristics is critical in a power system.

An isolated gate driver detection method is proposed for sorting the uniformity from the option of the turn-off characteristic.

In addition, an equivalent-circuit model for GaN FETs is established on the basis of the measured electrical characteristics and verified experimentally.