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Investigation of In Situ Boron-Doping in SiGe SourceDrain Layer Growth for PMOS Devices
Joint Authors
Zhang, David Wei
Zhong, Min
Chen, Shou Mian
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-10-27
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
Embedded SiGe (eSiGe) source/drain (S/D) was studied to enhance PMOS performance.
Detailed investigations concerning the effect of GeH4 and B2H6 gas flow rate on the resultant Boron-doping of the SiGe layer (on a 40 nm patterned wafer) were carried out.
Various SiGeB epitaxial growth experiments were realized under systematically varying experimental conditions.
Key structural and chemical characteristics of the SiGeB layers were investigated using Secondary Ion Mass Spectroscopy (SIMS), nanobeam diffraction mode (NBD), and Transmission Electron Microscopy (TEM) itself.
Furthermore, Ion/Ioff performances of 40 nm PMOS transistors are also measured by the Parametric Test Systems for the semiconductor industry.
The results indicate that the ratio between GeH4 and B2H6 gas flow rates influences not only the Ge and Boron content of the SiGeB layer, but also the PMOS channel strain and the morphology of the eSiGe S/D regions which directly affect PMOS performance.
In addition, the mechanism of Boron-doping during SiGe layer growth on the pattern wafer is briefly discussed.
The results and discussion presented within this paper are expected to contribute to the optimization of eSiGe stressor, aimed for advanced CMOS devices.
American Psychological Association (APA)
Zhong, Min& Chen, Shou Mian& Zhang, David Wei. 2015. Investigation of In Situ Boron-Doping in SiGe SourceDrain Layer Growth for PMOS Devices. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1069106
Modern Language Association (MLA)
Zhong, Min…[et al.]. Investigation of In Situ Boron-Doping in SiGe SourceDrain Layer Growth for PMOS Devices. Journal of Nanomaterials No. 2015 (2015), pp.1-6.
https://search.emarefa.net/detail/BIM-1069106
American Medical Association (AMA)
Zhong, Min& Chen, Shou Mian& Zhang, David Wei. Investigation of In Situ Boron-Doping in SiGe SourceDrain Layer Growth for PMOS Devices. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-6.
https://search.emarefa.net/detail/BIM-1069106
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1069106