Effects of Preparation Conditions on the CuInS2 Films Prepared by One-Step Electrodeposition Method

Abstract EN

CuInS2 thin films were prepared onto indium tin oxide (ITO) substrates by sulfurization of electrodeposited CuxInySz precursor films under S atmosphere.

The influences of deposition potential, Cu2+/In3+ ratio, sulfurization temperature, and sulfur content on the CuInS2 thin films were investigated.

Phases and structures were characterized by powder X-ray diffraction and Raman spectroscopy; surface morphology was characterized by Scanning Electron Microscopy; optical and electrical properties were characterized by UV-Vis absorption and Mott-Schottky curves, respectively.

As a result, the optimal well-crystallized CuInS2 films preparation parameters were determined to be deposition potential of −0.8 V, Cu2+/In3+ ratio of 1.4, sulfur content of 1 g, and the sulfurization temperature of 550°C for 1 h; CuInS2 thin films prepared by one-step electrodeposition present the p-type semiconductor, with thickness about 4-5 μm and their optical band gaps in the range of 1.53~1.55 eV.