Evolution of InAsGaAs QDs Size with the Growth Rate: A Numerical Investigation

Abstract EN

This paper investigates the impact of the deposition rate on the mean buried InAs/GaAs quantum dots’ (QDs) size by means of a coupled photoluminescence spectroscopy and numerical approach.

The proposed method consists in tuning the theoretical transition energies by changing the QDs aspect ratio towards best fit of the photoluminescence emission energies arising from the state filling effect.

The electron-hole confined states are obtained by solving the single particle one band effective mass Schrödinger equation in cylindrical coordinates for a lens shaped QD by finite element method taking into account the strain effects.

The obtained evolution is in agreement with morphological data taken from similar uncapped QDs samples.