Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond
Joint Authors
Lai, Chun Chi
Lu, Yi Wen
Chien, Hung Ju
Ying, Tzung Hua
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-06-29
Country of Publication
Egypt
No. of Pages
7
Main Subjects
Abstract EN
The gap-fill performance and process of perhydropolysilazane-based inorganic spin-on dielectric (PSZ-SOD) film in shallow trench isolation (STI) with the ultra-low dispensation amount of PSZ-SOD solution have been investigated in this study.
A PSZ-SOD film process includes liner deposition, PSZ-SOD coating, and furnace curing.
For liner deposition, hydrophilic property is required to improve the contact angle and gap-fill capability of PSZ-SOD coating.
Prior to PSZ-SOD coating, the additional treatment on liner surface is beneficial for the fluidity of PSZ-SOD solution.
The superior film thickness uniformity and gap-fill performance of PSZ-SOD film are achieved due to the improved fluidity of PSZ-SOD solution.
Following that up, the low dispensation rate of PSZ-SOD solution leads to more PSZ-SOD filling in the trenches.
After PSZ-SOD coating, high thermal curing process efficiently promotes PSZ-SOD film conversion into silicon oxide.
Adequate conversion from PSZ-SOD into silicon oxide further increases the etching resistance inside the trenches.
Integrating the above sequence of optimized factors, void-free gap-fill and well-controlled STI recess uniformity are achieved even when the PSZ-SOD solution dispensation volume is reduced 3 to 6 times compared with conventional condition for the 28 nm node NAND flash and beyond.
American Psychological Association (APA)
Lai, Chun Chi& Lu, Yi Wen& Chien, Hung Ju& Ying, Tzung Hua. 2015. Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1069421
Modern Language Association (MLA)
Lai, Chun Chi…[et al.]. Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond. Journal of Nanomaterials No. 2015 (2015), pp.1-7.
https://search.emarefa.net/detail/BIM-1069421
American Medical Association (AMA)
Lai, Chun Chi& Lu, Yi Wen& Chien, Hung Ju& Ying, Tzung Hua. Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-7.
https://search.emarefa.net/detail/BIM-1069421
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1069421