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Electrical Properties of Nanoscale ZnS Thin Film Transistor
Author
Source
Issue
Vol. 2015, Issue 2015 (31 Dec. 2015), pp.1-10, 10 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2015-06-16
Country of Publication
Egypt
No. of Pages
10
Main Subjects
Abstract EN
To understand the contact mechanism from electrical properties of the ZnS TFTs, ZnS was fabricated on SiOC as a gate insulator on a Si substrate.
Ohmic contact without a potential barrier increased the leakage current, but Schottky contact decreased the leakage current because of a Schottky barrier (SB).
The ZnS TFTs prepared on SiOC with a Schottky contact improved the stability with respect to the reduction of drain voltages.
The structural matching between ZnS and SiOC increased the height of SB such as ZnS annealed at 200°C, which made ZnS become an amorphous structure.
ZnS/SiOC films with a low SB increased the capacitance and leakage current.
The crystallinity orientation of ZnS localized defect states and the drift current owing to the impurity charge carriers caused the leakage current through low SB near zero voltages.
But the increment of diffusion currents in a depletion layer increased the SB and then decreased the leakage current.
So the electrical properties of devices were improved by a tunneling effect of diffusion currents.
American Psychological Association (APA)
Oh, Teresa. 2015. Electrical Properties of Nanoscale ZnS Thin Film Transistor. Journal of Nanomaterials،Vol. 2015, no. 2015, pp.1-10.
https://search.emarefa.net/detail/BIM-1069466
Modern Language Association (MLA)
Oh, Teresa. Electrical Properties of Nanoscale ZnS Thin Film Transistor. Journal of Nanomaterials No. 2015 (2015), pp.1-10.
https://search.emarefa.net/detail/BIM-1069466
American Medical Association (AMA)
Oh, Teresa. Electrical Properties of Nanoscale ZnS Thin Film Transistor. Journal of Nanomaterials. 2015. Vol. 2015, no. 2015, pp.1-10.
https://search.emarefa.net/detail/BIM-1069466
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1069466