Large-Signal DG-MOSFET Modelling for RFID Rectification
Joint Authors
Lazaro, Antonio
Rodríguez, R.
González, B.
García, J.
Iñiguez, B.
Hernández, A.
Source
Advances in Condensed Matter Physics
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-10-26
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
This paper analyses the undoped DG-MOSFETs capability for the operation of rectifiers for RFIDs and Wireless Power Transmission (WPT) at microwave frequencies.
For this purpose, a large-signal compact model has been developed and implemented in Verilog-A.
The model has been numerically validated with a device simulator (Sentaurus).
It is found that the number of stages to achieve the optimal rectifier performance is inferior to that required with conventional MOSFETs.
In addition, the DC output voltage could be incremented with the use of appropriate mid-gap metals for the gate, as TiN.
Minor impact of short channel effects (SCEs) on rectification is also pointed out.
American Psychological Association (APA)
Rodríguez, R.& González, B.& García, J.& Lazaro, Antonio& Iñiguez, B.& Hernández, A.. 2016. Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094946
Modern Language Association (MLA)
Rodríguez, R.…[et al.]. Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-6.
https://search.emarefa.net/detail/BIM-1094946
American Medical Association (AMA)
Rodríguez, R.& González, B.& García, J.& Lazaro, Antonio& Iñiguez, B.& Hernández, A.. Large-Signal DG-MOSFET Modelling for RFID Rectification. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094946
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1094946
