Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching

Joint Authors

Zhao, C. P.
Huang, H. B.
Ma, Xingqiao

Source

Advances in Condensed Matter Physics

Issue

Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-6, 6 p.

Publisher

Hindawi Publishing Corporation

Publication Date

2016-09-22

Country of Publication

Egypt

No. of Pages

6

Main Subjects

Physics

Abstract EN

We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory.

Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions.

The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.

American Psychological Association (APA)

Huang, H. B.& Zhao, C. P.& Ma, Xingqiao. 2016. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094952

Modern Language Association (MLA)

Huang, H. B.…[et al.]. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-6.
https://search.emarefa.net/detail/BIM-1094952

American Medical Association (AMA)

Huang, H. B.& Zhao, C. P.& Ma, Xingqiao. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094952

Data Type

Journal Articles

Language

English

Notes

Includes bibliographical references

Record ID

BIM-1094952