Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching
Joint Authors
Zhao, C. P.
Huang, H. B.
Ma, Xingqiao
Source
Advances in Condensed Matter Physics
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-09-22
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We investigated the effect of substrate misfit strain on the current-induced magnetization switching in magnetic tunnel junctions by combining micromagnetic simulation with phase-field microelasticity theory.
Our results indicate that the positive substrate misfit strain can decrease the critical current density of magnetization switching by pushing the magnetization from out-of-plane to in-plane directions, while the negative strain pushes the magnetization back to the out-of-plane directions.
The magnetic domain evolution is obtained to demonstrate the strain-assisted current-induced magnetization switching.
American Psychological Association (APA)
Huang, H. B.& Zhao, C. P.& Ma, Xingqiao. 2016. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics،Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094952
Modern Language Association (MLA)
Huang, H. B.…[et al.]. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics No. 2016 (2016), pp.1-6.
https://search.emarefa.net/detail/BIM-1094952
American Medical Association (AMA)
Huang, H. B.& Zhao, C. P.& Ma, Xingqiao. Micromagnetic Simulation of Strain-Assisted Current-Induced Magnetization Switching. Advances in Condensed Matter Physics. 2016. Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1094952
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1094952