Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures
Author
Source
Advances in Materials Science and Engineering
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-7, 7 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-06-06
Country of Publication
Egypt
No. of Pages
7
Abstract EN
A detailed analysis of the cross-like Hall cells integrated in regular bulk CMOS technological process is performed.
To this purpose their main parameters have been evaluated.
A three-dimensional physical model was employed in order to evaluate the structures.
On this occasion, numerical information on the input resistance, Hall voltage, conduction current, and electrical potential distribution has been obtained.
Experimental results for the absolute sensitivity, offset, and offset temperature drift have also been provided.
A quadratic behavior of the residual offset with the temperature was obtained and the temperature points leading to the minimum offset for the three Hall cells were identified.
American Psychological Association (APA)
Paun, Maria-Alexandra. 2016. Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures. Advances in Materials Science and Engineering،Vol. 2016, no. 2016, pp.1-7.
https://search.emarefa.net/detail/BIM-1096267
Modern Language Association (MLA)
Paun, Maria-Alexandra. Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures. Advances in Materials Science and Engineering No. 2016 (2016), pp.1-7.
https://search.emarefa.net/detail/BIM-1096267
American Medical Association (AMA)
Paun, Maria-Alexandra. Main Parameters Characterization of Bulk CMOS Cross-Like Hall Structures. Advances in Materials Science and Engineering. 2016. Vol. 2016, no. 2016, pp.1-7.
https://search.emarefa.net/detail/BIM-1096267
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1096267