Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET
Author
Source
Active and Passive Electronic Components
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-12-25
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band.
It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer.
The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers.
To examine the feasibility of our consideration, the model is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results.
This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.
American Psychological Association (APA)
Omura, Yasuhisa. 2016. Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET. Active and Passive Electronic Components،Vol. 2016, no. 2016, pp.1-8.
https://search.emarefa.net/detail/BIM-1096573
Modern Language Association (MLA)
Omura, Yasuhisa. Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET. Active and Passive Electronic Components No. 2016 (2016), pp.1-8.
https://search.emarefa.net/detail/BIM-1096573
American Medical Association (AMA)
Omura, Yasuhisa. Impact of Band Nonparabolicity on Threshold Voltage of Nanoscale SOI MOSFET. Active and Passive Electronic Components. 2016. Vol. 2016, no. 2016, pp.1-8.
https://search.emarefa.net/detail/BIM-1096573
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1096573