XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Sin-FZN Heterojunctions

Abstract EN

The chemical composition of the electrodeposited undoped and F-doped ZnO (FZN) rods was investigated by X-ray photoelectron spectroscopy (XPS).

These results confirmed the existence of F as a doping element into ZnO crystal lattice.

The p-Si/n-ZnO and p-Si/n-FZN heterojunction diodes were fabricated and their electrical properties were investigated.

Some parameters belong to these diodes such as ideality factor (n), barrier height ( ϕ B ), and series resistance ( R s ) which were calculated from the current-voltage (I-V) curves that exhibited rectifying behavior by using thermionic emission theory, Norde’s function, and Cheung’s method.

There is a good agreement between the diode parameters obtained from different methods.