Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device
Joint Authors
Zhang, David Wei
Zhou, Peng
Liu, W. J.
Chen, L.
Sun, Q. Q.
Lu, H. L.
Ding, S. J.
Source
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-6, 6 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-01-26
Country of Publication
Egypt
No. of Pages
6
Main Subjects
Abstract EN
We demonstrated a flash memory device with chemical-vapor-deposited graphene as a charge trapping layer.
It was found that the average RMS roughness of block oxide on graphene storage layer can be significantly reduced from 5.9 nm to 0.5 nm by inserting a seed metal layer, which was verified by AFM measurements.
The memory window is 5.6 V for a dual sweep of ±12 V at room temperature.
Moreover, a reduced hysteresis at the low temperature was observed, indicative of water molecules or −OH groups between graphene and dielectric playing an important role in memory windows.
American Psychological Association (APA)
Liu, W. J.& Chen, L.& Zhou, Peng& Sun, Q. Q.& Lu, H. L.& Ding, S. J.…[et al.]. 2016. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device. Journal of Nanomaterials،Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1109325
Modern Language Association (MLA)
Liu, W. J.…[et al.]. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device. Journal of Nanomaterials No. 2016 (2016), pp.1-6.
https://search.emarefa.net/detail/BIM-1109325
American Medical Association (AMA)
Liu, W. J.& Chen, L.& Zhou, Peng& Sun, Q. Q.& Lu, H. L.& Ding, S. J.…[et al.]. Chemical-Vapor-Deposited Graphene as Charge Storage Layer in Flash Memory Device. Journal of Nanomaterials. 2016. Vol. 2016, no. 2016, pp.1-6.
https://search.emarefa.net/detail/BIM-1109325
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1109325
