Charge Trapping in Monolayer and Multilayer Epitaxial Graphene
Joint Authors
Chuang, Chiashain
Aoki, Nobuyuki
Liang, Chi-Te
Liu, Chieh-I
Wang, Pengjie
Mi, Jian
Lee, Hsin-Yen
Zhang, Chi
Lin, Xi
Elmquist, Randolph E.
Source
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-03-27
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
We have studied the carrier densities n of multilayer and monolayer epitaxial graphene devices over a wide range of temperatures T.
It is found that, in the high temperature regime (typically T ≥ 200 K), ln(n) shows a linear dependence of 1/T, showing activated behavior.
Such results yield activation energies ΔE for charge trapping in epitaxial graphene ranging from 196 meV to 34 meV.
We find that ΔE decreases with increasing mobility.
Vacuum annealing experiments suggest that both adsorbates on EG and the SiC/graphene interface play a role in charge trapping in EG devices.
American Psychological Association (APA)
Liu, Chieh-I& Wang, Pengjie& Mi, Jian& Lee, Hsin-Yen& Zhang, Chi& Lin, Xi…[et al.]. 2016. Charge Trapping in Monolayer and Multilayer Epitaxial Graphene. Journal of Nanomaterials،Vol. 2016, no. 2016, pp.1-4.
https://search.emarefa.net/detail/BIM-1109358
Modern Language Association (MLA)
Liu, Chieh-I…[et al.]. Charge Trapping in Monolayer and Multilayer Epitaxial Graphene. Journal of Nanomaterials No. 2016 (2016), pp.1-4.
https://search.emarefa.net/detail/BIM-1109358
American Medical Association (AMA)
Liu, Chieh-I& Wang, Pengjie& Mi, Jian& Lee, Hsin-Yen& Zhang, Chi& Lin, Xi…[et al.]. Charge Trapping in Monolayer and Multilayer Epitaxial Graphene. Journal of Nanomaterials. 2016. Vol. 2016, no. 2016, pp.1-4.
https://search.emarefa.net/detail/BIM-1109358
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1109358
