An Improved Electrical Switching and Phase-Transition Model for Scanning Probe Phase-Change Memory

Abstract EN

Scanning probe phase-change memory (SPPCM) has been widely considered as one of the most promising candidates for next-generation data storage devices due to its fast switching time, low power consumption, and potential for ultra-high density.

Development of a comprehensive model able to accurately describe all the physical processes involved in SPPCM operations is therefore vital to provide researchers with an effective route for device optimization.

In this paper, we introduce a pseudo-three-dimensional model to simulate the electrothermal and phase-transition phenomena observed during the SPPCM writing process by simultaneously solving Laplace’s equation to model the electrical process, the classical heat transfer equation, and a rate equation to model phase transitions.

The crystalline bit region of a typical probe system and the resulting current-voltage curve obtained from simulations of the writing process showed good agreement with experimental results obtained under an equivalent configuration, demonstrating the validity of the proposed model.