p-Channel and n-Channel Thin-Film-Transistor Operation on Sprayed ZnO Nanoparticle Layers

Abstract EN

Both n-channel and p-channel thin-film transistors have been realized on ZnO nanoparticle (NP) layers sprayed onto quartz substrates.

In this study, nitrogen-doped ZnO-NPs were synthesized using an arc-discharge-mediated gas-evaporation method that was recently developed.

Sprayed NP layers were characterized by scanning electron microscopy and Hall effect measurements.

It was confirmed that p-type behaving NP layers can be obtained using ZnO-NPs synthesized with lower chamber pressure, whereas n-type conductivity can be obtained with higher chamber pressure.

pn-junction diodes were also tested, resulting in clear rectifying characteristics.

The possibility of particle-process-based ZnO-NP electronics was confirmed.