2.3 µm InGaAsSbAlGaAsSb Quantum-Well Laser Diode via InAsGaSb Superlattice Layer on GaAs Substrate
Joint Authors
You, Minghui
Sun, Qixiang
Yin, Liping
Fan, Juanjuan
Liang, Xuemei
Li, Xue
Yu, Xiuling
Li, Shijun
Liu, Jingshen
Source
Issue
Vol. 2016, Issue 2016 (31 Dec. 2016), pp.1-4, 4 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2016-12-25
Country of Publication
Egypt
No. of Pages
4
Main Subjects
Abstract EN
We present 2.3 μm InGaAsSb/AlGaAsSb type I laser diodes (LDs) on GaAs substrate; a superlattice (SL) layer was introduced as an interconnecting layer playing an important role in manipulating the optical field distribution and reducing free-carrier absorption in multiquantum wells (MQWs) for achieving balanced and optimal LDs performance.
Accordingly, power of 8.6 mW was obtained with 2.3 μm wavelength.
Our results demonstrate that superlattice layer may open a new avenue for high performance and improvement in mid-infrared laser diode.
American Psychological Association (APA)
You, Minghui& Sun, Qixiang& Yin, Liping& Fan, Juanjuan& Liang, Xuemei& Li, Xue…[et al.]. 2016. 2.3 µm InGaAsSbAlGaAsSb Quantum-Well Laser Diode via InAsGaSb Superlattice Layer on GaAs Substrate. Journal of Nanomaterials،Vol. 2016, no. 2016, pp.1-4.
https://search.emarefa.net/detail/BIM-1109423
Modern Language Association (MLA)
You, Minghui…[et al.]. 2.3 µm InGaAsSbAlGaAsSb Quantum-Well Laser Diode via InAsGaSb Superlattice Layer on GaAs Substrate. Journal of Nanomaterials No. 2016 (2016), pp.1-4.
https://search.emarefa.net/detail/BIM-1109423
American Medical Association (AMA)
You, Minghui& Sun, Qixiang& Yin, Liping& Fan, Juanjuan& Liang, Xuemei& Li, Xue…[et al.]. 2.3 µm InGaAsSbAlGaAsSb Quantum-Well Laser Diode via InAsGaSb Superlattice Layer on GaAs Substrate. Journal of Nanomaterials. 2016. Vol. 2016, no. 2016, pp.1-4.
https://search.emarefa.net/detail/BIM-1109423
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1109423
