Modeling, Design, and Fabrication of Self-Doping Si1−xGe xSi Multiquantum Well Material for Infrared Sensing

Abstract EN

The paper presents the study of band distributions and thermoelectric properties of self-doping Si1−xGe x/Si multiquantum well material for infrared detection.

The simulations of different structures (including boron doping, germanium concentrations, and SiGe layer thickness) have been conducted.

The critical thickness of SiGe layer grown on silicon substrate has also been illustrated in the paper.

The self-doping Si1−x Ge x/Si multiquantum well material was epitaxially grown on SOI substrate with reduced pressure chemical vapor deposition.

Each layer of the material is clear in the SEM.

The I - V characterizations and temperature resistance coefficient (TCR) tests were also performed to show the thermoelectric properties.

The TCR was about −3.7%/K at room temperature in the experiments, which is competitive with the other thermistor materials.

The material is a low noise material, whose root mean square noise is 1.89 mV in the experiments.