Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory
Joint Authors
Gorshkov, Oleg
Filatov, Dmitry
Antonov, Ivan
Tikhov, Stanislav
Morozov, Alexander
Koryazhkina, Maria
Source
Advances in Condensed Matter Physics
Issue
Vol. 2018, Issue 2018 (31 Dec. 2018), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2018-05-14
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes.
The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K.
These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.
American Psychological Association (APA)
Tikhov, Stanislav& Gorshkov, Oleg& Antonov, Ivan& Morozov, Alexander& Koryazhkina, Maria& Filatov, Dmitry. 2018. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Advances in Condensed Matter Physics،Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117143
Modern Language Association (MLA)
Tikhov, Stanislav…[et al.]. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Advances in Condensed Matter Physics No. 2018 (2018), pp.1-8.
https://search.emarefa.net/detail/BIM-1117143
American Medical Association (AMA)
Tikhov, Stanislav& Gorshkov, Oleg& Antonov, Ivan& Morozov, Alexander& Koryazhkina, Maria& Filatov, Dmitry. Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory. Advances in Condensed Matter Physics. 2018. Vol. 2018, no. 2018, pp.1-8.
https://search.emarefa.net/detail/BIM-1117143
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1117143