Magnetoresistance Effect in NiFeBPNiFe Vertical Spin Valve Devices

Abstract EN

Two-dimensional (2D) layered materials such as graphene and transition metal dichalcogenides are emerging candidates for spintronic applications.

Here, we report magnetoresistance (MR) properties of a black phosphorus (BP) spin valve devices consisting of thin BP flakes contacted by NiFe ferromagnetic (FM) electrodes.

The spin valve effect has been observed from room temperature to 4 K, with MR magnitudes of 0.57% at 4 K and 0.23% at 300 K.

In addition, the spin valve resistance is found to decrease monotonically as temperature is decreased, indicating that the BP thin film works as a conductive interlayer between the NiFe electrodes.