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Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield
Joint Authors
Mo, Haifeng
Zhang, Yaohui
Song, Helun
Source
Active and Passive Electronic Components
Issue
Vol. 2019, Issue 2019 (31 Dec. 2019), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2019-11-20
Country of Publication
Egypt
No. of Pages
8
Main Subjects
Abstract EN
LDMOS devices with grounded gate shield structures variations were simulated and tested, aiming to address hot carrier immunity and robustness concurrently.
Optimal configuration of grounded gate shield structure was found to reduce local electrical field strength at gate-to-drain overlap for better hot carrier immunity, and to achieve uniform E-field distribution on drain side for robustness as well.
Design trade off of hot carrier immunity (HCI) and robustness is analyzed by simulation and silicon data.
American Psychological Association (APA)
Mo, Haifeng& Zhang, Yaohui& Song, Helun. 2019. Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield. Active and Passive Electronic Components،Vol. 2019, no. 2019, pp.1-8.
https://search.emarefa.net/detail/BIM-1121687
Modern Language Association (MLA)
Mo, Haifeng…[et al.]. Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield. Active and Passive Electronic Components No. 2019 (2019), pp.1-8.
https://search.emarefa.net/detail/BIM-1121687
American Medical Association (AMA)
Mo, Haifeng& Zhang, Yaohui& Song, Helun. Design Tradeoff of Hot Carrier Immunity and Robustness in LDMOS with Grounded Gate Shield. Active and Passive Electronic Components. 2019. Vol. 2019, no. 2019, pp.1-8.
https://search.emarefa.net/detail/BIM-1121687
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1121687