Thermal Analysis of SiGaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses
Joint Authors
Qiu, Yuanying
Qiu, Xun
Guo, Xianghu
Wang, Dian
Sun, Lijie
Source
Advances in Materials Science and Engineering
Issue
Vol. 2017, Issue 2017 (31 Dec. 2017), pp.1-8, 8 p.
Publisher
Hindawi Publishing Corporation
Publication Date
2017-04-09
Country of Publication
Egypt
No. of Pages
8
Abstract EN
In order to effectively reduce the thermal stresses of Si/GaAs bonding wafers during their annealing process, first of all, based on E.
Suhir’s bimaterial thermal stress theory, the thermal stresses in the wafer bonding interfaces are analyzed and the thermal stress distribution formulas are obtained.
Then, the thermal stress distribution curves of Si/GaAs bonding interfaces are investigated by finite element method (FEM) and are compared with the results from E.
Suhir’s bimaterial thermal stress theory.
Finally, some effective strategies are proposed to reduce the thermal stresses in the bonding interfaces.
American Psychological Association (APA)
Qiu, Yuanying& Qiu, Xun& Guo, Xianghu& Wang, Dian& Sun, Lijie. 2017. Thermal Analysis of SiGaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses. Advances in Materials Science and Engineering،Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1124124
Modern Language Association (MLA)
Qiu, Yuanying…[et al.]. Thermal Analysis of SiGaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses. Advances in Materials Science and Engineering No. 2017 (2017), pp.1-8.
https://search.emarefa.net/detail/BIM-1124124
American Medical Association (AMA)
Qiu, Yuanying& Qiu, Xun& Guo, Xianghu& Wang, Dian& Sun, Lijie. Thermal Analysis of SiGaAs Bonding Wafers and Mitigation Strategies of the Bonding Stresses. Advances in Materials Science and Engineering. 2017. Vol. 2017, no. 2017, pp.1-8.
https://search.emarefa.net/detail/BIM-1124124
Data Type
Journal Articles
Language
English
Notes
Includes bibliographical references
Record ID
BIM-1124124
